-Dhacdo China TO Xidhmooyinka warshadda iyo soo saarayaasha |Jitaa
head

alaabta

TO Baakadaha

Waxaan soo saareynaa noocyo kala duwan oo qaababka caadiga ah iyo cabbirrada TO baakadaha oo ay ku jiraan TO5, TO9, TO18, TO38, TO39, TO46, TO56, TO60, iyo TO65.Waaxdayada R&D waxay kaloo leedahay awood buuxda oo ay kula shaqeyso macaamiisha xalalka la habeeyey.Waaxdayada dhejiska ee guriga waxay dhamaystirtaa hababka wax soo saarka


Faahfaahinta Alaabta

TO Baakadaha

Qaybaha

TO Header/TO Cap

Qaab dhismeedka madaxa

Madaafiic/Shabadaysan

Qaab dhismeedka Kabka

Koofiyadaha Lens-ka-yar/Koofiyadaha Muraayadaha Daaqadaha

Saldhig

Kovar/Alloy52/Alloy42/CRS

biinanka

Kovar

Insulator

BH-A/K

Giraanta Alxanka

HLAgcu28

Duubista

Ni/Ni,Au/Ni,Ag

Iska caabinta dahaarka

500V DC iska caabin u dhexeeya hal galaas oo shaabadeeyey pin iyo saldhig waa ≥1 × 10 ^ 10Ω

Hermeticity

Heerka daadinta waa ≤1×10^-3 Pa·cm 3/s

Codsiyada

Semiconductors, Diodes Laser, Wareegyada Elektarooniga ah

TO46 Taxanaha

    843f71cc03f65e867af89af2e797d55       038545ba171271acb2ef667b0103279    308ee0c503acebcfe2f392801929e48
  Saldhig

biinanka

Insulator

Giraanta Alxanka Duubista Iska caabinta dahaarka Hermeticity
TO46-057 4J42

4J29

BH-A/K

HLAgCu28 Ni 3:8.9µm,Au≥0.3µm

500V DC

iska caabin u dhexeeya hal galaas pin shaabadeeyey iyo salka waa

≥1×10^10 Ω

Heerka daadinta ayaa ah

≤1×10-3

Pa · cm 3/s

TO46-016 4J42

4J29

BH-A/K

HLAgCu28 Ni 3~8µm, Au≥0.3µm
TO46-058 4J29

4J29

BH-A/K

HLAgCu28

Ni 2~8.9µm, Au≥0.3µm

TO46-051 4J29

4J29

BH-A/K

HLAgCu28

Ni 3~8.9µm, Au≥0.3µm

TO46-071 4J29

4J29

BH-A/K

HLAgCu28

Ni 1.3 ~ 8.9µm, Au≥0.7µm

Guud ahaan xirmooyinka TO, oo si kale loo yaqaan Transistor Outline packs, waa labo qeybood oo dhismo ah;madaxa TO iyo koofiyadda TO.Qaybta madaxa waxa ay hubisaa in qaybaha hermetically shaabadeeyey ay helaan koronto halka furku fududeeyo gudbinta calaamadaha indhaha.Xirmooyinka waxay sameeyaan laf dhabarta si loogu rakibo qaybo badan oo muuqaal iyo elektiroonig ah oo ka socda wareegyada elektaroonigga ah ee aasaasiga ah oo dhan ilaa semiconductors.Leedhka laga soo dhex saaray guryaynta waxay koronto u keentaa qaybaha xidhan.Waxqabadka qaybahan xudunta u ah

Baakadaha TO sida sawirka iyo diodes laser waa muhiimada dhexe sababtoo ah arrimaha deegaanka ayaa sababi kara daxalka taas oo iyaduna keeni karta fashil ku yimaada dhammaan qaybaha.
Waayo-aragnimada ballaaran ee Jitai ee hermeticity waxay keenaysaa ciidan badan oo farsamooyin dhejis ah oo hubiya ilaalinta qaybaha la xidhay iyo inay awoodaan inay qabtaan shaqadooda loogu talagalay gudaha xirmada microelectronic sanadaha soo socda.


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